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Freescale Semiconductor Technical Data
Document Number: MRF6P9220H Rev. 2, 5/2006
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. * Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1600 mA, Pout = 47 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 20 dB Drain Efficiency -- 30% ACPR @ 750 kHz Offset -- - 47.1 dBc in 30 kHz Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 220 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Device Designed for Push - Pull Operation Only * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * Lower Thermal Resistance Package * Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications * Low Gold Plating Thickness on Leads, 40 Nominal. * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6P9220HR3
880 MHz, 47 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFET
CASE 375G - 04, STYLE 1 NI - 860C3
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +68 - 0.5, +12 700 4 - 65 to +150 150 200 Unit Vdc Vdc W W/C C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 220 W CW Case Temperature 76C, 47 W CW Symbol RJC Value(1,2) 0.25 0.28 Unit C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF6P9220HR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 3B (Minimum) C (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics
(1)
Symbol IDSS IDSS IGSS
Min -- -- --
Typ -- -- --
Max 10 1 1
Unit Adc Adc Adc
Zero Gate Voltage Drain Leakage Current (4) (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (4) (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 350 Adc) Gate Quiescent Voltage (3) (VDS = 28 Vdc, ID = 1600 mAdc, Measured in Functional Test) Drain- Source On - Voltage (1) (VGS = 10 Vdc, ID = 2.4 Adc) Forward Transconductance (1) (VDS = 10 Vdc, ID = 2.4 Adc) Dynamic Characteristics (1,2) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
VGS(th) VGS(Q) VDS(on) gfs
1 2 0.1 --
2.2 2.8 0.22 7.4
3 4 0.3 --
Vdc Vdc Vdc S
Crss
--
2.1
--
pF
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, Pout = 47 W Avg. N - CDMA, f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss 1. 2. 3. 4. Each side of device measured separately. Part internally matched both on input and output. Measurement made with device in push - pull configuration. Drains are tied together internally as this is a total device value. Gps D ACPR IRL 18.5 28.5 -- -- 20 30 - 47.1 - 14 23 -- - 45 -9 dB % dBc dB
MRF6P9220HR3 2 RF Device Data Freescale Semiconductor
R1 VBIAS B1 + R3 COAX1 C1 C2 C3 Z19 Z8 Z10 Z12 Z14 Z16 C14 C10 Z3 C5 R2 COAX2 VBIAS + C9 C7 C8 C24 Z1, Z18 Z2, Z3 Z4, Z5 Z6, Z7 Z8, Z9 0.401 x 0.081 Microstrip 0.563 x 0.081 Microstrip 0.416 x 0.727 Microstrip 0.058 x 1.01 Microstrip 0.191 x 0.507 Microstrip Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 Z19, Z20 PCB + C19 C20 + C22 C21 B2 Z7 Z20 C6 Z5 DUT C11 C12 RF Z18 OUTPUT C23 + C15 C16 + C18 C17 VSUPPLY
COAX3
Z6 Z2 RF INPUT Z1 C4 Z4
Z9
Z13
Z15
Z17 C13
Z11
COAX4 VSUPPLY
1.054 x 0.150 Microstrip 0.225 x 0.507 Microstrip 0.440 x 0.335 Microstrip 0.123 x 0.140 Microstrip 0.165 x 0.339 Microstrip GX - 0300, 0.030, r = 2.55
Figure 1. MRF6P9220HR3 Test Circuit Schematic
Table 5. MRF6P9220HR3 Test Circuit Component Designations and Values
Part B1, B2 C1, C9 C2, C7, C17, C21 C3, C8, C16, C20 C4, C5, C13, C14 C6, C12 C10 C11 C15, C19 C18, C22 C23, C24 Coax1, 2, 3, 4 R1, R2 R3 Description Ferrite Beads, Short 1.0 F, 50 V Tantalum Chip Capacitors 0.1 F Chip Capacitors 1000 pF 100B Chip Capacitors 100 pF 100B Chip Capacitors 8.2 pF 600B Chip Capacitors 9.1 pF 600B Chip Capacitor 1.8 pF 600B Chip Capacitor 47 F, 50 V Electrolytic Capacitors 470 F, 63 V Electrolytic Capacitors 22 pF 600B Chip Capacitors 50 , Semi Rigid Coax, 2.40 Long 10 , 1/8 W Chip Resistors (1206) 1.0 k, 1/8 W Chip Resistor (1206) Part Number 2743019447 T491C105K050AS CDR33BX104AKWS 100B102JP50X 100B101JP500X 600B8R2BT250XT 600B9R1BT250XT 600B1R8BT250XT MVK50VC47RM8X10TP SME63V471M12X25LL 600B220FT250XT UT - 141A- TP Kemet Kemet ATC ATC ATC ATC ATC Nippon United Chemi - Con ATC Micro - Coax Manufacturer Fair- Rite
MRF6P9220HR3 RF Device Data Freescale Semiconductor 3
C1 B1 C3
C15
C18 VDD C16 C17
VGG R3
C2
R1
C23
COAX1
COAX3
MRF6P9220, Rev. 1
C4 CUT OUT AREA C11 C10 C12
C14
C6 C5
C13
COAX2
COAX4
C20 VGG C7 C8 B2 C24 VDD
C21
C9
R2
C19
C22
Figure 2. MRF6P9220HR3 Test Circuit Component Layout
MRF6P9220HR3 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) -7 -9 -11 -13 -15 -17 D, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) -7 -9 -11 -13 -15 -17 2400 mA -50 2000 mA 1600 mA -60 3 10 100 500 5 10 100 Pout, OUTPUT POWER (WATTS) PEP 500 Pout, OUTPUT POWER (WATTS) PEP IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) 21 20.7 20.4 Gps, POWER GAIN (dB) 20.1 19.8 19.5 19.2 18.9 18.6 18.3 18 850 860 870 880 890 900 f, FREQUENCY (MHz) ALT1 IRL ACPR VDD = 28 Vdc, Pout = 47 W (Avg.) IDQ = 1600 mA, N-CDMA IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Gps D 31 30 29 28 27 -45 -50 -55 -60 -65 -70 910
Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 47 Watts Avg.
20 19.8 V = 28 Vdc, Pout = 94 W (Avg.) 19.6 DD IDQ = 1600 mA, N-CDMA IS-95 19.4 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 19.2 19 18.8 18.6 18.4 18.2 18 850 860 870 880 890 900 f, FREQUENCY (MHz) ALT1 IRL ACPR D 42 41 40 39 Gps 38 -35 -40 -45 -50 -55 -60 910
20.5 20 Gps, POWER GAIN (dB) 19.5 19 18.5 800 mA 18 17.5 17 VDD = 28 Vdc, f1 = 879.95 MHz, f2 = 880.05 MHz Two-Tone Measurements, 100 kHz Tone Spacing 2000 mA 1600 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 2400 mA
Gps, POWER GAIN (dB)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 94 Watts Avg.
-10 VDD = 28 Vdc, f1 = 879.95 MHz, f2 = 880.05 MHz Two-Tone Measurements, 100 kHz Tone Spacing -20
-30
1200 mA
IDQ = 800 mA
-40
1200 mA
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF6P9220HR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
-10 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) -20 -30 -40 -50 -60 -70 -80 -90 7 10 100 Pout, OUTPUT POWER (WATTS) PEP 500 7th Order 3rd Order 5th Order VDD = 28 Vdc, IDQ = 1600 mA, f1 = 879.95 MHz f2 = 880.05 MHz, Two-Tone Measurements -20 -25 -30 -35 -40 -45 -50 -55 -60 0.1 1 TWO-TONE SPACING (MHz) 10 50 7th Order 3rd Order 5th Order VDD = 28 Vdc, Pout = 220 W (PEP) IDQ = 1600 mA, Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz
Figure 7. Intermodulation Distortion Products versus Output Power
Figure 8. Intermodulation Distortion Products versus Tone Spacing
61 Pout, OUTPUT POWER (dBm) 59 57
P6dB = 54.95 dBm (312.77 W) Ideal P3dB = 54.60 dBm (288.76 W)
P1dB = 54.05 dBm (255.09 W) 55 53 51 49 29 31 33 35 37 39 41 Pin, INPUT POWER (dBm) VDD = 28 Vdc, IDQ = 1600 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 880 MHz Actual
Figure 9. Pulse CW Output Power versus Input Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
50 VDD = 28 Vdc, IDQ = 1600 mA f = 880 MHz, N-CDMA IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 25_C D -30_C
-30
40
-35 25_C 85_C -40
30 TC = -30_C 20 25_C 10 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100 85_C ACPR Gps
-45
-50 -55 300
Figure 10. Single - Carrier N - CDMA ACPR, Power Gain and Drain Efficiency versus Output Power MRF6P9220HR3 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
21 TC = -30_C 20.5 Gps, POWER GAIN (dB) 20 19.5 19 18.5 18 17.5 17 7 10 VDD = 28 Vdc IDQ = 1600 mA f = 880 MHz 100 Pout, OUTPUT POWER (WATTS) CW 85_C D 25_C Gps 25_C 85_C 48 40 32 24 16 8 500 -30_C 64 56 D, DRAIN EFFICIENCY (%) 72
Figure 11. Power Gain and Drain Efficiency versus CW Output Power
20.5 19.5 Gps, POWER GAIN (dB) 18.5 17.5 16.5 16 V 15.5 14.5 0 50 VDD = 12 V 100 150 200 250 300 350 400 20 V IDQ = 1600 mA f = 880 MHz
24 V 28 V
32 V
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
1010 MTTF FACTOR (HOURS x AMPS2)
109
108
107 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 13. MTTF Factor versus Junction Temperature MRF6P9220HR3 RF Device Data Freescale Semiconductor 7
N - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ 750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ 1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. (dB)
-10 -20 -30 -40 -50 -60 -70 -80 -90 -100
1.2288 MHz Channel BW . ... .... . .. ........................ .... ............ ................. . .. . . . . . . . . . . . . . . . . . . -ALT1 in 30 kHz +ALT1 in 30 kHz . . . . Integrated BW Integrated BW .... . ... ............. .... ........... ........ ........ . .... ... . ......... . ... .. ... . ........ . ..... . ........ . ... . .. ......... ...... ....... ..... ....... ..... ... ..... .... .... . ..... ... ........ . .... ......... . .. .... . ...... .... ....... .. .. ........ -ACPR in 30 kHz .. +ACPR in 30 kHz ............ ..... ........... ..... .. ... ............... ......... .. ... ... ...... Integrated BW Integrated BW .. ........ ..... ... . ....... ............ .. ....... .....
Figure 14. Single - Carrier CCDF N - CDMA
-110 -3.6 -2.9 -2.2
-1.5 -0.7
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 15. Single - Carrier N - CDMA Spectrum
MRF6P9220HR3 8 RF Device Data Freescale Semiconductor
f = 850 MHz Zload Zo = 10
f = 910 MHz
f = 910 MHz
f = 850 MHz
Zsource
VDD = 28 Vdc, IDQ = 1600 mA, Pout = 47 W Avg. f MHz 850 865 880 895 910 Zsource 3.50 - j7.10 3.59 - j7.07 3.03 - j6.98 2.42 - j6.20 2.26 - j5.39 Zload 6.04 - j0.49 6.83 - j1.14 7.41 - j1.19 7.60 - j0.98 8.06 - j0.45
Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration.
Input Matching Network
+
Device Under Test
-
Output Matching Network
- Z source Z
+ load
Figure 16. Series Equivalent Source and Load Impedance
MRF6P9220HR3 RF Device Data Freescale Semiconductor 9
NOTES
MRF6P9220HR3 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
G L ccc R
M
4
2X
TA
M
B
M
J
1 2
Q bbb
M
TA
M
B
M
(LID) NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DIMENSION H TO BE MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.140 (28.96) BASED ON 3M SCREW. DIM A B C D E F G H J K L M N Q R S bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.180 0.224 0.325 0.335 0.060 0.070 0.004 0.006 1.100 BSC 0.097 0.107 0.2125 BSC 0.135 0.165 0.425 BSC 0.852 0.868 0.851 0.869 0.118 0.138 0.395 0.405 0.394 0.406 0.010 REF 0.015 REF DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 4.57 5.69 8.26 8.51 1.52 1.78 0.10 0.15 27.94 BSC 2.46 2.72 5.397 BSC 3.43 4.19 10.8 BSC 21.64 22.05 21.62 22.07 3.00 3.30 10.03 10.29 10.01 10.31 0.25 REF 0.38 REF
B
5 4X
(FLANGE)
K
4X
3
4
S
(INSULATOR) M
D bbb
M
B TA
M
bbb
TA
M
B
M
B
M
ccc
M
TA
(LID)
M
B
M
N
F
E
H bbb A
(INSULATOR) M
M
C B
M
T
TA A
M
SEATING PLANE
STYLE 1: PIN 1. 2. 3. 4. 5.
CASE 375G - 04 ISSUE G NI - 860C3
MRF6P9220HR3 RF Device Data Freescale Semiconductor 11
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MRF6P9220HR3
Rev. 12 2, 5/2006 Document Number: MRF6P9220H
RF Device Data Freescale Semiconductor

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